The MORGaN project addresses the need for a new material basis for electronic
devices and sensors that operate in extreme conditions particularly high
temperatures or electric fields. It will take advantage of the excellent
physical properties of diamond and gallium nitride (GaN) based heterostructures.
The association of these two materials will promises ultimate performance
devices in extreme environments.
These wide band gap materials are suitable for high voltage (>10
kV) switching applications. This is crucial for the next generation of efficient
long distance power distribution systems required for geographically dispersed
renewable energy sources. It is also highly desirable in many other,
traditionally inefficient, electrical energy conversion systems. As a result GaN/diamond composite could replace silicon for
extreme environment applications.
A list of key outputs from the project
In these short (<2min) videos, some of the experts working on the MORGaN project
talk about their work.
The main areas of work in the MORGaN project include:
|Diamond has the highest
thermal conductivity of any solid material and is potentially the ultimate
substrate for many high temperature or extreme power applications.
||MORGaN will develop epitaxial
growth of low defect density III-N layers and HEMT structures on high
thermal conductivity substrates
Harsh environment devices
|Packaging and metallisation
are important considerations in extreme environments. MORGaN explores
available materials and new packaging technologies.
||A "harsh environment" can be
external (e.g. high temperature or pressure) or internal (e.g.
as a consequence of power dissipation under high current flow).