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MORGaN topic
III-N materials development

MORGaN will directly explore the new InxAl1-xN/GaN heterostructure developed in the UltraGaN project. This allows a lower intrinsic mechanical stress minimising materials degradation mechanisms. The "nano-columns" technique developed at the University of Bath will be used to grow low defect density GaN film.

Using these technologies, MORGaN has the following objectives:

  • Development of polycrystalline diamond/silicon sandwich hybrid substrates

  • Development of innovative compliant heterostructures for growing low defect density GaN film, including AlGaN alloys

  • Growth optimisation of InAlN/GaN heterostructures for electronic and sensing applications under extreme conditions.

MORGaN is supported by the European Commission under FP7