PUBLIC SITE
Members

Home
Up
Consortium
Related links
Project news
Events

Project outputs
MORGaN finished on 31-Oct-2011.

The consortium would welcome any feedback or comments, or suggestions for further collaborative research.
Please contact Sylvain Delage or Bruce Napier.


MORGaN summary brochure
Nov-2011
A summary of the key MORGaN advances during the course of the project


MORGaN flyer
An A4 flyer describing the project objectives

MORGaN presentation
A broad overview of the project in presentation format

MORGaN newsletters
Newsletter #6 Nov-11
Newsletter #5 Jul-11
Newsletter #4 Jan-11
Newsletter #3 Jul-10
Newsletter #2 Jan-10
Newsletter #1 Jun-09

MORGaN videos
Five short videos from MORGaN experts on the key themes of the project

III-N materials
Temperature dependent properties of GaN
A comprehensive literature study of measured properties of GaN compiled by Michael Edwards at the University of Bath

ITE measurement capabilities
Overview of techniques available at Institute of Electron Technology (Warsaw) for measurement of wafer bow and thermal stress

 

MORGaN publications
In all there were over 120 conference papers and articles and almost 30 papers in refereed journals resulting from the MORGaN work. For a complete list, please contact Bruce Napier or Sylvain Delage.

The following list gives a few relevant papers and presentations from the MORGaN consortium:

Diamond overgrown InAlN/GaN HEMT
M. Alomari, M. Dipalo, S. Rossi, M.-A. Diforte-Poisson, S. Delage, J.-F. Carlin, N. Grandjean, C. Gaquiere, L. Toth, B. Pecz and E. Kohn
Diamond and Related Materials 20, 4, 604 (Apr-11).

Testing the Temperature Limits of GaN-Based HEMT
D. Maier, M. Alomari, N. Grandjean, J.-F. Carlin, M.-A. Diforte-Poisson, C. Dua, A. Chuvilin, D. Troadec, C. Gaquière, U. Kaiser, S. Delage, E.  Kohn 
IEEE Transactions on Device and Materials Reliability 10, 4, 427 (Dec-10).

Modelling Wafer Bow in Silicon–polycrystalline CVD Diamond Substrates for GaN-based Devices
M.J. Edwards, C.R. Bowen, D.W.E. Allsopp and A.C.E. Dent
Journal of Physics D: Applied Physics 43, 38, 385502 (Sep-10).

Metal-related gate sinking due to interfacial oxygen layer in Ir/InAlN high electron mobility transistors
Applied Physics Letters 96, 26, 263515 (Jul-10)
C. Ostermaier, G. Pozzovivo, B. Basnar, W. Schrenk, M. Schmid, L. Tóth, B. Pécz, J.-F. Carlin, M. Gonschorek, N. Grandjean, G. Strasser, D. Pogany, and J. Kuzmik.

AlGaN/GaN HEMT on (111) single crystalline diamond
M. Alomari, A. Dussaigne, D. Martin, N. Grandjean, C. Gaquiere, E. Kohn
Electronics Letters 46, 4, 299 (Feb-10).

Thermal oxidation of lattice matched InAlN/GaN heterostructures
Physica Status Solidi C 7, 1 13 (Jan-10)
M. Alomari, A. Chuvilin, L. Toth, B. Pecz, J.-F. Carlin, N. Grandjean, C. Gaquière, M.-A. di Forte-Poisson, S. Delage and E. Kohn

Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors
J. Kuzmik, G. Pozzovivo, C. Ostermaier, G. Strasser, D. Pogany, E. Gornik, J.-F. Carlin, M. Gonschorek, E. Feltin, N. Grandjean
Journal of Applied Physics 106, 12, 124503 (Dec-09)

InAlN/GaN MOSHEMT With Self-Aligned Thermally Generated Oxide Recess
M. Alomari, F. Medjdoub, J.-F. Carlin, E. Feltin, N. Grandjean, A. Chuvilin, U. Kaiser, C. Gaquiere, E. Kohn 
IEEE Electron Device Letters 30, 11, 1131 (Nov-09).

Au free ohmic contacts for high temperature InAlN/GaN HEMT’s
M Alomari, D Maier, J-F
Carlin, N Grandjean, M-A Diforte-Poisson, S Delage, E Kohn
216th ECS meeting, Vienna, Austria (Oct-09).

Above 500°C Operation of InAlN/GaN HEMTs
D Maier, M Alomari, C Dua, N Grandjean, J-F Carlin, A Chuvilin, S Delage, E Kohn
Device Research Conference 2009 (DRC2009); USA (Jun-09).

Thick Nano-Crystalline Diamond Overgrowth on InAlN/GaN Devices For Thermal Management

M Dipalo, M Alomari, J-F Carlin, N Grandjean, M-A Diforte-Poisson, S Delage, E Kohn
Device Research Conference 2009 (DRC2009); USA (Jun-09).
 

 

Analytical dual gate FET model to identify surface charge instabilities in the gate drain drift region
P Herfurth, D Kueck, M Alomari, E Kohn
Workshop on Compound Semiconductor Devices & Integrated Circuits 2009 (WOCSDICE 2009);
Malaga, Spain; 17-20 (May-09).


High temperature operation for AlGaN/GaN HEMTs

D Maier, N Sarazin, C Dua, E Morvan, S Delage, E Kohn
Workshop on Compound Semiconductor Devices & Integrated Circuits 2009 (WOCSDICE 2009);
Malaga, Spain; 17-20 (May-09).


Modelling silicon/ polycrystalline CVD diamond composite substrates for use with GaN-based devices
M Edwards, C Bowen, D Allsopp
Presented at Dielectrics 2009; Reading University; 15-17 Apr-09.

Diamond overgrowth on InAlN/GaN heterostructures
M Dipalo, M Alomari, S Delage, E Kohn
Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD); USA (Feb-09).
 

MORGaN is supported by the European Commission under FP7