PUBLIC SITE
Members

Home
Up
Consortium
Related links
Project news
Events
Topics and results

MORGaN Consortium

21 Technische Universität Wien

Contact     Jan Kuzmik

Location    Vienna, Austria

Overview  
Institute for Solid State Electronics (ISSE) TU Vienna (TUW) is active in basic and applied research in the field of opto-electronics, THz electronics, and Si and III-V material-based micro- and nano-electronics. The Institute has III-V growth facilities, full process line for Si and III-V devices including plasma etching, lithography, then FIB, SEM, STM, SCM tools and electrical and optical characterisation facilities.

Main research topics and capabilities
The device characterisation group in ISSE has a range of expertise:

  • Optical and electrical device characterisation

  • Semiconductor material and device physics

  • Electrostatic discharge (ESD) phenomena

  • Self-heating effects

  • Failure analysis

  • Electro-optics

  • Degradation and reliability physics of Si and III-V devices.

Key techniques and skills include:

  • Transient interferometric mapping (TIM) for temperature and free carrier mapping inside semiconductor devices with ns and µs space resolution. Dynamics of self-heating effects, current conduction and avalanche breakdown phenomena and high current bipolar effects have been studied in many power and sensor devices. TIM is recognised by the microelectronics industry as a useful tool for design optimisation and for verification of device/circuit electro-thermal simulation models at high currents and temperatures.

  • Electro-thermal measurements and 2D numerical and 3D analytical thermal modelling

  • III-V material physics and device processing (including InAlN/GaN HEMTs and MOSHETs and detectors) and in oxide layer (including high-k) deposition by MOCVD and ALD (SiO2, Hf02, ZrO2, Al2O3). CV (including Terman or UV-assisted) and charge pumping are available for measuring the density of interface states in MIS or MOS structures. A pulsed IV set-up allows analysis of current lag for characterisation of interface and surface states in GaN HEMTs. Furthermore ageing mechanisms have been studied in DMOS devices and InGaN/GaN LEDs. Emission microscopy, optical beam induced current and low frequency noise spectroscopy are used for defect and failure analysis.

MORGaN tasks

  • Passivation

  • Thermal characterisation and analysis

  • Electrical analysis including defect and degradation analysis.

MORGaN is supported by the European Commission under FP7