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MORGaN Consortium

1 Alcatel-Thales III-V Lab

Contact     Dr. Sylvain Delage

Location    Marcoussis & Palaiseau, France

ATL is one of the leading European industrial laboratories on GaN material and devices, including circuit design and reliability. In particular ATL is the centre of excellence of its mother companies Alcatel-Lucent and Thales on III-V microelectronics and directly connected to the market needs in the field of telecommunications and radars.

Main research topics and capabilities

  • GaN material growth,

  • GaN microwave components (high power, high efficiency, wide band)

  • High brightness / wall-plug efficiency semiconductor lasers

  • Quantum cascade semiconductor lasers

  • High resolution infrared imaging sensors

  • Optical sources and detectors 10-40+Gbps (analogue and digital).

Key facilities

  • 4000m2 clean rooms

  • Advanced material synthesis (MOCVD, MBE)

  • Advanced device processing (RIE, ICP, CAIBE, IBE)

  • Measurement, modelling & design equipment.

MORGaN tasks

  • Management and coordination

  • MOCVD growth of InAlN material on SiC and diamond-on-silicon substrates

  • Degradation mechanisms assessment and study

  • Physical transport and thermal modelling

  • Demonstration of microwave power devices

  • Monitoring of innovation.

MORGaN is supported by the European Commission under FP7