Centre National de la Recherche Scientifique
Prof. Jean-Claude De
Location Lille, France
IEMN is a joint research unit (supported by the University of Lille 1 and CNRS)
which has a long traditional expertise in device design, fabrication and
characterisation of heterostructure field effect transistors for low noise and
power applications. It plays an important role in France in research and
co-operates with many other European laboratories (e.g. CRHEA, IRCOM,
CEA-LETI) and industries (e.g. Thales, Philips, Alcatel, DaimlerChrysler)
through various national and international programmes.
Main research topics and capabilities
Over a dozen full-time engineers and technicians work in
the field of device fabrication within the IEMN 1000m2 technological
facilities. The technology is based on a 2’’ line with state-of-the-art e-beam
lithography for the most advanced devices. Fabricated devices include
metamorphic AlInAs/GaInAs HEMTs and GaInP/GaInAs/GaAs HEMTs.
IEMN has great experience in the field
of device characterisation and microwave measurements:
Wafer probing up to 220 GHz is
possible with 30–220 kHz network analysers associated with wafer probing.
A very accurate and original
extraction method from S parameters and DC measurements, allowing the
deduction of the elements constituting the equivalent circuit of FETs, has
been conceived in the Institute and implanted in several French industrial
Noise measurements can be performed
from MHz up to 60 GHz and 94 GHz using a noise analyser with appropriate
mixers and calibrated noise sources.
Power characterisation is available
from 2 to 18 GHz and 26 to 40 GHz with load pull set-ups.
A high temperature (400°C) microwave
measurement set-up on wafer is also available for large band gap devices.
Focused ion beam device characterisation
Physical-thermal modelling of HEMTs
Elaboration of non-linear models of
Study of the thermal behaviour by means
of electrical measurements
Preliminary study of the device
degradation performance versus time and temperature
Small transistor characterisation based on electrical and