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MORGaN Consortium

12 Centre National de la Recherche Scientifique

Contact     Prof. Jean-Claude De Jaeger

Location    Lille, France

Overview  
IEMN is a joint research unit (supported by the University of Lille 1 and CNRS) which has a long traditional expertise in device design, fabrication and characterisation of heterostructure field effect transistors for low noise and power applications. It plays an important role in France in research and co-operates with many other European laboratories (e.g. CRHEA, IRCOM, CEA-LETI) and industries (e.g. Thales, Philips, Alcatel, DaimlerChrysler) through various national and international programmes.

Main research topics and capabilities
Over a dozen full-time engineers and technicians work in the field of device fabrication within the IEMN 1000m2 technological facilities. The technology is based on a 2 line with state-of-the-art e-beam lithography for the most advanced devices. Fabricated devices include metamorphic AlInAs/GaInAs HEMTs and GaInP/GaInAs/GaAs HEMTs.

IEMN has great experience in the field of device characterisation and microwave measurements:

  • Wafer probing up to 220 GHz is possible with 30220 kHz network analysers associated with wafer probing.

  • A very accurate and original extraction method from S parameters and DC measurements, allowing the deduction of the elements constituting the equivalent circuit of FETs, has been conceived in the Institute and implanted in several French industrial laboratories.

  • Noise measurements can be performed from MHz up to 60 GHz and 94 GHz using a noise analyser with appropriate mixers and calibrated noise sources.

  • Power characterisation is available from 2 to 18 GHz and 26 to 40 GHz with load pull set-ups.

  • A high temperature (400C) microwave measurement set-up on wafer is also available for large band gap devices.

MORGaN tasks

  • Focused ion beam device characterisation

  • Physical-thermal modelling of HEMTs

  • Elaboration of non-linear models of transistors

  • Study of the thermal behaviour by means of electrical measurements

  • Preliminary study of the device degradation performance versus time and temperature

  • Small transistor characterisation based on electrical and microwave measurements

MORGaN is supported by the European Commission under FP7