MORGaN finished on 31-Oct-2011.
The project results are summarised in the Final MORGaN Brochure (Nov-2011)
GaN power HEMTs An outline of the reasons GaN is such an interesting material for microwave devices
GaN high power electronics Access to text of published papers papers on GaN-based HEMTs
GaN HEMT application notes Specific application notes for designers on the optimal application of GaN substrates (from Nitronex Corp. USA)
MORGaN partners' technical website areas
University of Ulm Institute of Electron Devices & Circuits Technology homepage; applications of novel electronic and electromechanical devices fabricated from large-bandgap semiconductors, with an emphasis on diamond
STU in Bratislava Faculty of Electrical Engineering and Information Technology homepage
IEMN Microwave Power Devices Research activities
Supermaterials research at Element Six; further information on supermaterials including synthetic diamond: properties, manufacture and case studies
General semiconductor technology links
Semiconductors information Wide-ranging informative site with data and links relating to semiconductors, including III-V materials
Semiconductor data Extensive referenced technical data on a number of semiconductor materials including III-V materials from the Russian Ioffe Institute
GaN materials development Workers at Radboud University (The Netherlands) are also researching low defect GaN and diamond substrates
Organisations working in MORGaN-related areas
Diamond Microwave Devices A UK company developing novel diamond semiconductor materials and processing technology with the aim of creating the next generation of high-power, high-frequency semiconductor devices.
Ceimig Ltd. A UK supplier of thin film and nano-scale catalysts and sensors.
Public domain articles
Europe turns to AlInN to push the limits of transistor and sensor performance
Fujitsu develops GaN HEMT for use in power supplies
Advanced substrate demand to increase for gallium-nitride devices
Light-enhanced wet etch eats into GaN
Heterostructuring for high speed, power and light
Powering up GaN MOSFETs
considerations for GaN technology
and electronic materials for harsh environments – a mission to the USA
"Breakthrough gives diamond electronics sparkle"
MORGaN is supported by the European Commission under FP7