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Technical references

MORGaN finished on 31-Oct-2011.

The project results are summarised in the Final MORGaN Brochure (Nov-2011)

The consortium would welcome any feedback or comments, or suggestions for further collaborative research.
Please contact Sylvain Delage or Bruce Napier.

In all there were over 120 conference papers and articles and almost 30 papers in refereed journals resulting from the MORGaN work. For a complete list, please contact Bruce Napier or Sylvain Delage.

For copyright reasons only citation information or publicly available abstracts are listed below.

The following papers are categorised into the following broad and overlapping topical areas:

  • III-N materials
  • Diamond substrates and coatings
  • Novel and harsh environment devices
  • Packaging and metallisation

III-N materials

Material characterisation

Characterisation of Al2O3/AlGaN/GaN MOSHFETs by measurement at elevated ambient temperatures
P.Kordoš, M.Florovič et al.
Proc. WOCSDICE 2008 113-114 (2008).

Effect of fluoride plasma treatment on InAlN/GaN HEMTs
F. Medjdoub, M. Alomari et al.
Electron. Lett. 44, 696 (2008).
Abstract Publication on InAlN/GaN HEMTs on SiC substrate

Effect of Anodic Oxidation on the Characteristics of Lattice-Matched AlInN/GaN Heterostructures
C. Pietzka, A. Denisenko et al.
J. Electron. Mater. 37, 616 (2008).
A study of the change in electronic and chemical sensing characteristics of these materials.

Analysis of thermal effect influence in gallium-nitride-based TLM structures by means of a transport-thermal modeling
B. Benbakhti, M. Rousseau et al.
IEEE Trans. Electron Devices, 53, 2237-2242 (2006).

Publication on the physical-thermal modeling used in the MORGaN project

Measurement of temperature distribution in multifinger AlGaNÕGaN heterostructure field-effect transistors using micro-Raman spectroscopy
M. Kuball, S. Rajasingam et al.
App. Phys. Letters 82, 124 (2003).
Novel technique for measuring temperature distribution

High temperature elastic constant prediction of some group III-Nitrides
R.R. Keeber, K.Wang
MRS Internet Journal Nitride Semiconductor Research 6, 3 (2001).
Key study on the mechanical behaviour of III-N materials at high temperature.

Polarization effects in nitride semiconductor device structures and performance of modulation doped field effect transistors
H. Morkoç et al.
Pergamon Solid State Electronics 43, 1753-1771 (1999).
Key paper for the understanding of polarisation effects in GaN, AlN and InN and their impact on devices such as MDFET (HEMT).

TEM Sample Preparation by Ion Milling/Amorphization
Á. Barna, B. Pécz and M. Menyhard
MICRON 30 267-276 (1999).

Preparation techniques for transmission electron microscopy
Á. Barna, G. Radnóczi and B. Pécz
In Handbook of Microscopy, (eds.
S. Amelinckx et al.) VCH Verlag 3, Ch. II/3,  751-801(1997).
Key paper describing fundamental techniques.


Diamond substrates and coatings


Novel and harsh environment devices

Sensor applications

GaN Electrochemical Probes and MEMS on Si
U. Heinle, P. Benkart, et al.
Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates
MRS Symposium Proceedings, 1068 (2008).

Modelling and designing GaN piezeoelectric MEMS
C.R. Bowen, D.W.E. Allsopp, R. Stevens, P. Shields and W.N. Wang
Proc. 2nd Int. Conf. on Multi-Material Micro Manufacture (4M2006), Grenoble, Sep-06, Elsevier, Oxford, p 179-182. [ISBN 0-080-45263-9]

Piezoelectric GaN Sensor Structures
T. Zimmermann, M. Neuburger et al.
IEEE Elec. Dev. Lett. 27, 309 (2006).
Abstract Sensors based on free-standing GaN and AlGaN/GaN cantilevers fabricated on (111) silicon substrate.

GaN-base diodes and transistors for chemical, gas, biological and pressure sensing
S.J. Pearton et al.
J.Phys.: Condens. Matter, 16 R961-994 (2004).
A good review paper on sensing devices using GaN.

GaN Based Piezo Sensors
M. Neuburger, T. Zimmermann et al.
Proc. 62st Device Research Conference, p. 45 (2004).
Abstract Early work on free-standing GaN membrane and cantilever structures.

Power electronics applications

SThM temperature mapping and nonlinear thermal resistance evolution with bias on AlGaN/GaN HEMT devices
R. Aubry, J. C. Jacquet, J. Weaver et al.
IEEE Transactions on Electron Devices 54, 385-390 (2007)
Paper on thermal mapping from Microtherm; an FP5 project which involved several MORGaN partners.

Output power density of 5.1W/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate
D. Ducatteau, A. Minko et al.
IEEE Electron Device Lett. 27, 7-9 (2006).
Relevant publication on state-of-the-art results obtained on GaN based HEMTs

Power electronics on InAlN/(In)GaN: prospect for a record performance
J. Kuzmík
IEEE Electron Devices Letters 22, 510 (2001).

Self-Heating Effects in High-Power AlGaN/GaN HFETs
M. Kuball, M.J. Uren et al.
MRS Fall Meeting Paper I 12-4 (2001)
Abstract Non-invasive temperature measurement, i.e. self-heating effects, in active AlGaN/GaN HFETs; micro-Raman spectroscopy was used to produce temperature maps with c. 1µm spatial resolution and a temperature accuracy of better than 10°C.

Harsh environment device performance

High-temperature performance of AlGaN/GaN HFETs and MOSHFETs

D. Donoval, M. Florovic et al.
Microelectronics Reliability 48 1669–1672 (2008).

Harsh Environment Materials
E. Kohn
In “Comprehensive Microsystems”, Vol. 1: Y.B. Gianchandani, O. Tabata and H. Zappe (Eds), Amsterdam Elsevier Publ. p 131-182 (2008).
A review of semiconductor sensors and actuators (including SiC, III-Nitrides and CVD diamond) for harsh environment applications.

Performance of AlGaN/GaN heterostructure field-effect transistors at higher ambient temperatures
M. Florovič, P. Kordoš et al.
Journal of Electrical Engineering 59, 53 (2008).

Can InAlN/GaN be an alternative to high power/high temperature AlGaN/GaN devices?
F. Medjdoub, J-F Carlin et al.
In IEDM Tech. Dig. p 1 (2006).

Smart material/actuator needs in extreme environments in space
S. Sherrit
SPIE Smart Structures Conference; SPIE 5761-48, (2005).
A review of the requirements of devices in space applications, including extreme heat and cold, high and low pressure, corrosion and radiation.


Packaging and metallisation

Laser sintering: Layer by layer
Christof M. Stotko
Nature Photonics 3 265 (2009); doi:10.1038/nphoton.2009.60
A review of layer by layer fabrication techniques analagous to FCubic approach

MORGaN is supported by the European Commission under FP7